clvova.blogg.se

Transfer Ratio of forwarding Current/hFE Value is120.Operating temperature (Max) ranges from -65 to +150 C.Transition Frequency (fT) Max is 100 MHz.Dissipation of Collector (Pc) Max is 1 Watt.Voltage from emitter to base (VBE) Max is 5V.Voltage from collector to base (VCB) Max is 30V.

Voltage from collector to the emitter (VCE) max is 20V.Collector Current Max (IC) is 700mA/0.7A.Pin1 (Emitter): The flow of current will drain out using this terminal This transistor includes three pins where each pin and its functionality are discussed below. The pin configuration of the S8050 transistor & its symbol is shown below. For better performance of S8050 transistor, it must operate in forward bias condition otherwise Pin Configuration Here EB junction is forward biased whereas the CB junction is reverse biased. This transistor includes two PN junctions like EB and CB. So these transistors are available with two charge carriers like holes & electrons where the majority of charge carriers are electrons. Generally, transistors are available in two types like UJT & BJT where the S8050 transistor comes under BJT (Bipolar Junction Transistor) category. In the transistor, the small current at one terminal is mainly used to control the huge current at the remaining terminals. The base terminal in the transistor can be doped lightly whereas the collector terminal is doped moderately. These three transistor terminals are dissimilar in doping concentration wherever emitter is extremely doped as compared to both the terminals like collector and base. This transistor is a three-terminal component like emitter, base & collector which are used for external connection through different circuits. So if you are looking for a medium power NPN transistor in Plastic package then this Transistor might be the right choice for you.S8050 is an NPN Transistor with high current & low voltage capabilities. Due to this feature this transistor is widely used in amplifier applications. This reduces the cost of the Transistor and also since the package is not conductive it will not be affected by other noise in the circuit. It also has a very less saturation voltage (Base Emitter Voltage VBE) of only 5V, this makes it easy to use this IC in digital electronics which has an operating voltage of 5V.Īnother peculiar fact about this transistor is that it comes in plastic package, while most medium power transistor are available only in metal can package.

The BD139 was originally manufactured by Phillips rated at 160MHz for specific audio applications, later they were cloned by other manufacturers like Samsung, ST etc.īeing a Medium Power NPN Transistor with a collector current of 1.5A this transistor can be used to control (On/Off) bigger loads that consume less than 1.5A. When base current is removed the transistor becomes fully off, this stage is called as the Cut-off Region. This stage is called Saturation Region and the typical voltage allowed across the Collector-Emitter (V­CE) or Base-Emitter (VBE) could be 80V. When this transistor is fully biased then it can allow a maximum of 1.5A to flow across the collector and emitter. To bias a transistor we have to supply current to base pin, this current (IB) should be limited to 1/10th of the collector current and voltage across the base emitter pin should be 5V maximum. The maximum amount of current that could flow through the Collector pin is 1.5A, hence we cannot connect loads that consume more than 1.5A using this transistor. TIP31C, SL100, S8050, BC547, 2N2222, 2N4401īD139 is a NPN transistor hence the collector and emitter will be left open (Reverse biased) when the base pin is held at ground and will be closed (Forward biased) when a signal is provided to base pinīD139 has a gain value of 40 to 160, this value determines the amplification capacity of the transistor. Note: Complete Technical Details can be found at the BD139 transistor datasheet provided at the bottom of this page.